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Abstract

Embodiments of the disclosure provide a solution to carry out High Dynamic Range (HDR) imaging based on dynamic well capacity adjustment without incurring additional spatial-temporal noise and consequent Signal-to-Noise Ratio (SNR) dips caused by the sub-threshold operation of a CMOS (Complementary Metal-Oxide-Semiconductor) reset transistor in a pixel cell. Embodiments of the disclosure employ realizations of transistors other than CMOS, e.g. Tunnel Field-Effect Transistors (TFETs), featuring asymmetric conduction between two of its terminals, where asymmetric conduction means that current can only flow in one direction between those two terminals. In some embodiments, one of such realizations plays the role of the pixel reset transistor in order to exploit the asymmetric conduction to perform dynamic well capacity adjustment. As a result, the sources of spatial-temporal noise arising from the sub-threshold operation of the pixel reset transistor in CMOS implementations are removed.

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First Claim