SEMICONDUCTOR STRUCTURE
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United States of America Patent
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Issued Date -
Feb 16, 2017
app pub date -
Apr 12, 2016
filing date -
Aug 14, 2015
priority date (Note) -
Abandoned
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Abstract
Provided is a semiconductor structure including a first die and a second die. The first die has a first conductive structure embedded in a dielectric layer. The second die has a second conductive structure embedded in the dielectric layer. A first interface is provided between the first conductive structure and the dielectric layer. A second interface is provided between the second conductive structure and the dielectric layer. A shape of the dielectric layer between the first interface and the second interface is a non-linear shape.
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