METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE INCLUDING FORMING A DIELECTRIC LAYER AROUND A PATTERNED ETCH MASK
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United States of America Patent
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Feb 16, 2017
app pub date -
Aug 12, 2015
filing date -
Aug 12, 2015
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Abstract
A method of manufacturing a semiconductor device includes: providing a semiconductor having active regions; depositing a dielectric layer on the semiconductor; forming a patterned etch mask on the dielectric layer; depositing a further dielectric layer on the dielectric layer and the patterned etch mask; planarizing the further dielectric layer until the patterned etch mask is exposed; and forming a further patterned etch mask having an opening on the further dielectric layer so that portions of the patterned etch mask are exposed from the opening.
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