MAGNETORESISTIVE ELEMENT

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United States of America Patent

APP PUB NO 20170047085A1
SERIAL NO

15061850

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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According to one embodiment, a magnetoresistive element includes a first magnetic layer having an invariable magnetization direction, a second magnetic layer having a variable magnetization direction, a first nonmagnetic layer between the first and second magnetic layers, a third magnetic layer having a variable magnetization direction, the magnetization directions of the second and third magnetic layers being opposite directions each other, and a second nonmagnetic layer between the second and third magnetic layers.

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Patent Owner(s)

Patent OwnerAddress
TOSHIBA MEMORY CORPORATION1-1 SHIBAURA 1-CHOME MINATO-KU TOKYO 105-0023

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
NOMA, Kenji Yokkaichi Mie, JP 70 489

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