IGBT
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United States of America Patent
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Issued Date -
Feb 9, 2017
app pub date -
Aug 5, 2016
filing date -
Aug 7, 2015
priority date (Note) -
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Abstract
An IGBT comprises emitter regions, a collector region, a drift region and a body region in a semiconductor substrate. The semiconductor substrate comprises a trench extending from the front surface of the semiconductor substrate and reaching the drill region. The trench partitions the front surface of the semiconductor substrate into a plurality of blocks in a plan view of the semiconductor substrate. The plurality of the blocks comprises cell blocks, each of which is partitioned to be smaller than a predetermined area by the trench, and a surrounding block which is a region other than the cell blocks. The collector region, the drift region, the body region and the emitter region are provided in each of the cell blocks and the surrounding block. A total area of the emitter regions in the cell blocks is greater than a total area of the emitter region in the surrounding block.
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