IMAGE SENSOR AND METHOD FOR FABRICATING THE SAME
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United States of America Patent
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app pub date -
Oct 19, 2015
filing date -
Aug 6, 2015
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Abstract
An image sensor includes a semiconductor substrate, a plurality of photoelectric transducer devices and a dielectric isolating structure. The semiconductor substrate has a backside surface and a front side surface opposite to the backside surface. The photoelectric transducer devices are disposed on the front side surface. The dielectric isolating structure extends downwards into the semiconductor substrate from the front side surface and penetrates through the backside surface, so as to from a grid structure and isolate the photoelectric transducer devices from each other.
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