Semiconductor Device with a Laterally Varying Doping Profile, and Method for Manufacturing Thereof

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United States of America Patent

APP PUB NO 20170040317A1
SERIAL NO

15226338

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Abstract

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A semiconductor device includes a semiconductor substrate having a first side. At least a first doping region is formed in the semiconductor substrate. The first doping region has a laterally varying doping dosage and/or a laterally varying implantation depth.

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Patent Owner(s)

Patent OwnerAddress
INFINEON TECHNOLOGIES DRESDEN GMBHDRESDEN

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Bartels, Martin Dresden, DE 16 43
Lemke, Marko Dresden, DE 36 149
Rudolf, Ralf Dresden, DE 22 180
Tegen, Stefan Dresden, DE 71 517
Weis, Rolf Dresden, DE 146 1480

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