Method for heat treatment of silicon single crystal wafer
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United States of America Patent
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Dec 26, 2017
Issued Date -
N/A
app pub date -
Aug 1, 2015
filing date -
Jan 16, 2014
priority date (Note) -
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status (Latency Note)
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Abstract
A method for a heat treatment of a silicon single crystal wafer in an oxidizing ambient, including: performing the heat treatment based on a condition determined by a tripartite correlation between a heat treatment temperature during the heat treatment, an oxygen concentration in the silicon single crystal wafer before the heat treatment, and a growth condition of a silicon single crystal from which the silicon single crystal wafer is cut out. This provides a method for a heat treatment of a silicon single crystal wafer which can annihilate void defects or micro oxide precipitate nuclei in a silicon single crystal wafer with low cost, efficiently, and securely by a heat treatment in an oxidizing ambient.
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- 1 Citation Count
- C01B Class
- 27.23 % this patent is cited more than
- 8 Age
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