THIN-FILM TRANSISTOR STRUCTURE
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United States of America Patent
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Issued Date -
Feb 2, 2017
app pub date -
Nov 4, 2015
filing date -
Jul 31, 2015
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Abstract
The present invention provides a thin-film transistor structure, which comprises a substrate, a first metal layer, a first buffer layer, a semiconductor layer, a second metal layer, a second buffer layer, and a third metal layer. The second metal layer includes a gap region; the semiconductor layer includes a channel region. The present invention uses the first and third metal layers to form double gates. By controlling the channel region using the double-gate structure, the turn-on current of the thin-film transistor can be enhanced and thus achieving the efficacy of improving the driving efficiency of the device.
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