MEMORY DEVICE AND FABRICATING METHOD THEREOF
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United States of America Patent
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N/A
Issued Date -
Feb 2, 2017
app pub date -
Jul 30, 2015
filing date -
Jul 30, 2015
priority date (Note) -
Abandoned
status (Latency Note)
Importance
Abstract
A memory device and a method for fabricating thereof are provided. The memory device includes a substrate, a first active region, a second active region, a gate structure, and a contact structure. The first active region and the second active region are alternately disposed in the substrate. The gate structure is disposed in the substrate and between the first active region and the second active region. The contact structure is over the substrate and electrically connected to one of the first active region and the second active region. The contact structure includes a metal portion directly in contact with one of the first active region and the second active region.
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