MITIGATING TRANSIENT TSV-INDUCED IC SUBSTRATE NOISE AND RESULTING DEVICES
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United States of America Patent
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Feb 2, 2017
app pub date -
Jul 29, 2015
filing date -
Jul 29, 2015
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Abstract
Methods for creating effective noise reducing structures in an IC device to significantly reduce TSV-induced noise in an IC substrate of the IC device and the resulting device are disclosed. Embodiments include providing a plurality of circuits on an upper surface of an IC substrate; providing an active TSV in proximity to the circuits, wherein the TSV extends through the IC substrate; forming a noise reducing structure connected to a perimeter of a vertical segment of the active TSV; and connecting the noise reducing structure to an electrical ground node in common with the circuits.
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