METHOD FOR FABRICATING FIN OF FINFET OF SEMICONDUCTOR DEVICE
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United States of America Patent
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Issued Date -
Feb 2, 2017
app pub date -
Jul 31, 2015
filing date -
Jul 31, 2015
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Abandoned
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Abstract
A method for fabricating a semiconductor device on a wafer includes: patterning a plurality of fins on the wafer; forming a shallow-trench isolation region to surround the plurality of fins; and etching the STI region to form the plurality of fins having a fin height such that the semiconductor device has a desired power consumption. The plurality of fins corresponds to a plurality of finFETs of the semiconductor device respectively.
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