SEMICONDUCTOR ESD PROTECTION CIRCUIT
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United States of America Patent
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Issued Date -
Jan 26, 2017
app pub date -
Mar 4, 2016
filing date -
Mar 6, 2015
priority date (Note) -
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Abstract
A semiconductor device includes a Zener diode having an anode layer and a cathode layer. The Zener diode provides an electrostatic discharge (ESD) path for ESD signals. At least two channel diodes are coupled to the ESD path of the Zener diode. Each of the channel diodes includes a common cathode layer and a separate anode region. The common cathode layer of the channel diodes is disposed on the cathode layer of the Zener diode. At least two channels are provided where each channel is coupled to one of the separate anode regions to provide an electrical connection for protected signal paths to the ESD path.
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