SEMICONDUCTOR INTERCONNECT STRUCTURE AND MANUFACTURING METHOD THEREOF
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United States of America Patent
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Jan 26, 2017
app pub date -
Sep 10, 2015
filing date -
Jul 23, 2015
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Abstract
A semiconductor interconnect structure and a manufacturing method thereof are provided. The semiconductor interconnect structure includes a barrier metal layer, a copper metal layer, and a compound thin film. The barrier metal layer is formed on an interconnect trench, the copper metal layer is formed on the barrier metal layer, and the compound thin film is formed on a surface of the copper metal layer, wherein the compound thin film contains organocopper and amorphous carbon. Therefore, the resulting semiconductor interconnect structure has reduced resistivity.
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