METHODS AND STRUCTURES FOR BACK END OF LINE INTEGRATION
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United States of America Patent
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app pub date -
Feb 12, 2016
filing date -
Apr 29, 2014
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Abstract
Embodiments of the present invention provide a semiconductor structure for BEOL (back end of line) integration. A directed self assembly (DSA) material is deposited and annealed to form two distinct phase regions. One of the phase regions is selectively removed, and the remaining phase region serves as a mask for forming cavities in an underlying layer of metal and/or dielectric. The process is then repeated to form complex structures with patterns of metal separated by dielectric regions.
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