Method and apparatus for plasma dicing a semi-conductor wafer
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United States of America Patent
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Mar 6, 2018
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app pub date -
Oct 6, 2016
filing date -
Mar 14, 2011
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Abstract
The present invention provides a method for plasma dicing a substrate. The method comprising providing a process chamber having a wall; providing a plasma source adjacent to the wall of the process chamber; providing a work piece support within the process chamber; placing the substrate onto a support film on a frame to form a work piece work piece; loading the work piece onto the work piece support; providing a clamping electrode for electrostatically clamping the work piece to the work piece support; providing a mechanical partition between the plasma source and the work piece; generating a plasma through the plasma source; and etching the work piece through the generated plasma.
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