Semiconductor structures having T-shaped electrodes

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United States of America Patent

PATENT NO 9887089
SERIAL NO

15285782

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Abstract

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A semiconductor structure having a T-shaped electrode. The electrode has a top portion and a narrower stem portion extending from the top portion to a surface of a substrate. A solid dielectric layer has side portions juxtaposed and abutting sidewalls of a lower portion of the stem of electrode. A bottom surface of the top portion is spaced from an upper surface portion by a non-solid dielectric, such as air.

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Patent Owner(s)

Patent OwnerAddress
RAYTHEON COMPANY870 WINTER STREET WALTHAM MA 02451-1449

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Hwang, Kiuchul Amherst, US 21 88
Shaw, Dale M Groton, US 3 8
Williams, Adrian D Methuen, US 12 55

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