High-Speed, High-Voltage GaN-Based Operational Amplifier

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United States of America Patent

APP PUB NO 20170019069A1
SERIAL NO

14800928

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Abstract

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A high-speed, high-voltage gallium nitride based (GaN-based) operational amplifier (op amp) is disclosed. The combined high-speed, high-voltage capability allows the GaN-based op amp to serve as a dynamic power supply (DPS) for a radio frequency power amplifier (RFPA). When serving as a DPS for an RFPA, the GaN-based op amp is capable of supplying ampere-scale currents that accurately track rapidly-varying envelopes of non-constant envelope RF signals, thereby allowing the RFPA to convert high-bandwidth non-constant envelope RF signals to high RF output powers with high signal envelope accuracy.

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Patent Owner(s)

Patent OwnerAddress
ERIDAN COMMUNICATIONS INC1171 HOMESTEAD ROAD SUITE 295 SANTA CLARA CA 95050

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Dunsmore, Marnie San Francisco, US 2 14

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