Semiconductor device and method of forming EMI shielding layer with conductive material around semiconductor die
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United States of America Patent
Stats
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N/A
Issued Date -
N/A
app pub date -
Sep 29, 2016
filing date -
Jun 2, 2010
priority date (Note) -
Published
status (Latency Note)
Importance
Abstract
A semiconductor device has a plurality of first semiconductor die mounted over an interface layer formed over a temporary carrier. An encapsulant is deposited over the first die and carrier. A flat shielding layer is formed over the encapsulant. A channel is formed through the shielding layer and encapsulant down to the interface layer. A conductive material is deposited in the channel and electrically connected to the shielding layer. The interface layer and carrier are removed. An interconnect structure is formed over conductive material, encapsulant, and first die. The conductive material is electrically connected through the interconnect structure to a ground point. The conductive material is singulated to separate the first die. A second semiconductor die can be mounted over the first die such that the shielding layer covers the second die and the conductive material surrounds the second die or the first and second die.
First Claim
Other Claims data not available
Family
International Classification(s)
- 2016 Application Filing Year
- H01L Class
- 27971 Applications Filed
- 23507 Patents Issued To-Date
- 84.05 % Issued To-Date
Cited Art Landscape
Patent Citation Ranking
- 1 Citation Count
- H01L Class
- 41.95 % this patent is cited more than
- 5 Age
Maintenance Fees
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|---|---|---|---|---|
| 7.5 Year Payment | $3600.00 | $1800.00 | $900.00 | Nov 5, 2027 |
| 11.5 Year Payment | $7400.00 | $3700.00 | $1850.00 | Nov 5, 2031 |
