Resistive Random Access Memory And Writing Operation Method Thereof
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United States of America Patent
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Jan 19, 2017
app pub date -
Sep 17, 2014
filing date -
Feb 28, 2014
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Abstract
The invention provides a resistive random access memory and a writing operation method thereof, and pertains to the technical field of resistive random access memory (ReRAM). The resistive random access memory comprises a writing operation signal generation module which is at least used for generating electrical signal(s) hazing gradually reducing voltages as set operation signals; in a Set operation method of the writing operation method, electrical signal(s) hazing gradually reducing voltages are biased, as Set operation signals, onto a selected memory unit in the resistive random access memory. The Set operation method can improve storage performances of ReRAM in terms of endurance, data retention and high resistance/low resistance window, etc.
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