PRESSURE SENSOR WITH BUILT IN STRESS BUFFER
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
N/A
Issued Date -
Jan 19, 2017
app pub date -
Jun 16, 2016
filing date -
Jul 14, 2015
priority date (Note) -
Published
status (Latency Note)
Importance
Abstract
A semiconductor pressure sensor comprising: a semiconductor substrate having a through-opening extending from a top surface to a bottom surface of the substrate, the through-opening forming a space between an inner part and an outer part of said substrate; a pressure responsive structure arranged on said inner part; a number of flexible elements extending from said inner part to said outer part for suspending the inner part within said through-opening; the through-opening being at least partly filled with an anelastic material. A method of producing such a semiconductor pressure sensor.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully