PLASMA ATOMIC LAYER DEPOSITION SYSTEM AND METHOD
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United States of America Patent
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Issued Date -
Jan 19, 2017
app pub date -
Sep 27, 2016
filing date -
Dec 31, 2008
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Abstract
A gas deposition chamber includes a volume expanding top portion and a substantially constant volume cylindrical middle portion and optionally a volume reducing lower portion. An aerodynamically shaped substrate support chuck is disposed inside the gas deposition chamber with a substrate support surface positioned in the cylindrical middle portion. The top portion reduces gas flow velocity, the aerodynamic shape of the substrate support chuck reduces drag and promotes laminar flow over the substrate support surface, and the lower portion increases gas flow velocity after the substrate support surface. The gas deposition chamber is configurable to 200 mm diameter semiconductor wafers using ALD and or PALD coating cycles. A coating method includes expanding process gases inside the deposition chamber prior to the process gas reaching a substrate surface. The method further includes compressing the process gases inside the deposition chamber after the process gas has flowed passed the substrate being coated.
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