SEMICONDUCTOR LIGHT-EMITTING ELEMENT
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United States of America Patent
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Issued Date -
Jan 12, 2017
app pub date -
Feb 2, 2015
filing date -
Feb 5, 2014
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Abstract
Provided is a semiconductor light emitting element formed by growing an active layer in the c-axis direction and having a peak emission wavelength of at least 530 nm, wherein the light emission efficiency is greater than the conventional art. A semiconductor light-emitting element has a peak emission wavelength of greater than or equal to 530 nm, and comprise: an n-type semiconductor layer; an active layer formed above n-type semiconductor layer; and a p-type semiconductor layer formed above the active layer. In the active layer, a first layer composed of InX1Ga1-X1N (0≦X1≦0.01), a second layer composed of InX2Ga1-X2N (0.2
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