METHOD FOR ROUGHENING SILICON SUBSTRATE SURFACE
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United States of America Patent
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Jan 12, 2017
app pub date -
Jun 7, 2016
filing date -
Jul 10, 2015
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Abstract
A method for roughening silicon substrate surface includes providing a silicon substrate having a waiting-for-etching surface, the waiting-for-etching surface has a plurality of first and second areas; forming a plurality of covering bumps on the first areas, and a gap is formed between each of the covering bumps and each of the first areas; and etching the waiting-for-etching solution by a anisotropic etching solution. The anisotropic etching solution permeates into each of the first areas through the gap to lead the etching time of the first areas is shorter than that of the second areas, so the waiting-for-etching surface becomes a undulate surface having a plurality of undulate structures because the etching depth of the first areas is smaller than that of the second areas.
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