SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
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United States of America Patent
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Issued Date -
Jan 12, 2017
app pub date -
Jul 5, 2016
filing date -
Jul 7, 2015
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Abstract
A terminal structure includes: a first trench extending along a depth direction from an upper surface of a semiconductor substrate; a plurality of second trenches, each of which extends along the depth direction from a bottom surface of the first trench and which are arranged at intervals in a direction away from an element portion; a plurality of first floating regions having a floating potential, each of which is exposed at the bottom surface of the first trench, is disposed between the second trenches, and forms a PN-junction with a surrounding region thereof; and a plurality of second floating regions having a floating potential, each of which is exposed at a bottom surface of the second trench and forms a PN-junction with a surrounding region thereof. The plurality of second floating regions is arranged to be separated from each other in the direction away from the element portion.
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