Method for Filling a Trench and Semiconductor Device
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United States of America Patent
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Issued Date -
Jan 12, 2017
app pub date -
Jul 8, 2016
filing date -
Jul 10, 2015
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Abstract
A method includes forming a first trench in a semiconductor body between two semiconductor fins, filling the first trench with a first filling material, partially removing the first filling material by forming a second trench such that the second trench has a lower aspect ratio than the first trench, and at least partially filling the second trench with a second filling material so as to form a continuous material layer on the first filling material. A semiconductor device includes a first trench in a semiconductor body between two semiconductor fins, the first trench being filled with a first filling material, and a second trench having a lower aspect ratio than the first trench and being at least partially filled with a second filling material which forms a continuous material layer on the first filling material.
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