METHOD OF FABRICATING SEMICONDUCTOR DEVICE
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United States of America Patent
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Issued Date -
Jan 12, 2017
app pub date -
Sep 16, 2015
filing date -
Jul 8, 2015
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Abandoned
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Abstract
A method of fabricating a semiconductor device includes the following steps. A substrate including an isolation region and a device region is provided. An overall amorphization process is performed on the substrate to form an amorphous region. Here, a minimum depth of the amorphous region is greater than a maximum depth of at least one of the isolation region and the device region, and the amorphous region covers at least one of the isolation region and the device region. A thermal treatment is performed on the amorphous region.
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