Semiconductor Device with Split Work Functions
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United States of America Patent
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Issued Date -
Jan 5, 2017
app pub date -
Jun 30, 2015
filing date -
Jun 30, 2015
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Abstract
A field effect transistor (FET) configuration is provided having a gate region with a split work function for the source-side and drain-side of the gate region. The work function of a material is defined as the minimum energy required to extract an electron from the surface of the material to free space. Accordingly, the source-side portion of the gate region has a first work function that less than a second work function of the drain-side portion, the result of which is increased breakdown voltage at the drain-gate interface, without significantly increasing the threshold voltage of the FET. The split work function is achieved by layering n-type gate material over p-type gate material in the drain-side portion of the gate region, while only the n-type gate material us used in the source-side portion of the gate region.
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