SUBSTRATE, METHOD OF PREPARING THE SAME, AND LIGHT-EMITTING DIODE USING THE SUBSTRATE

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United States of America Patent

APP PUB NO 20160380153A1
SERIAL NO

15191862

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Abstract

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The present invention relates to a gallium nitride substrate, a method of preparing the gallium nitride substrate, and a double-sided light-emitting diode using the gallium nitride substrate. The gallium nitride substrate has a first face having a Ga-polar face and a second face having an N-polar face. Protrusions with semi-polar surfaces are formed on the second face. A light-emitting body may be formed on the first face, and a separate light-emitting body may be formed through the surfaces of the protrusions.

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Patent Owner(s)

Patent OwnerAddress
GWANGJU INSTITUTE OF SCIENCE AND TECHNOLOGY123 CHEOMDANGWAGI-RO BUK-GU GWANGJU 61005

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Kong, Duk-Jo Gwangju, KR 3 5
LEE, Dong-Seon Gwangju, KR 14 408

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