III-nitride power semiconductor device
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United States of America Patent
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Mar 20, 2018
Grant Date -
Dec 29, 2016
app pub date -
Jun 23, 2016
filing date -
Mar 20, 2006
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Abstract
A power semiconductor device includes a III-nitride heterojunction body including a first III-nitride body and a second III-nitride body having a different band gap than that of the first III-nitride body, a first power electrode coupled to the second III-nitride body, a second power electrode coupled to the second III-nitride body, a gate array arrangement disposed between the first and second power electrodes, and a conductive channel that includes a two-dimensional electron gas that in a conductive state includes a reduced charge region under the gate arrangement that is less conductive than its adjacent regions. The reduced charge region extends beyond an edge of the gate arrangement toward one of the power electrodes only.
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