SHAPED TERMINALS FOR A BIPOLAR JUNCTION TRANSISTOR
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
N/A
Issued Date -
N/A
app pub date -
Jun 23, 2015
filing date -
Jun 23, 2015
priority date (Note) -
Abandoned
status (Latency Note)
Importance
Abstract
Device structure and fabrication methods for a bipolar junction transistor. An emitter layer is formed on a base layer and etched to form an emitter of the device structure. The emitter layer has a concentration of an element that varies as a function of the thickness of the emitter layer. The etch rate of the emitter layer varies as a function of the concentration of the element such that the emitter has a variable width over the thickness of the emitter layer.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully