TECHNIQUES AND APPARATUS FOR ANISOTROPIC METAL ETCHING
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Sep 13, 2016
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Aug 5, 2014
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In one embodiment, a method for etching a copper layer disposed on a substrate includes directing reactive ions to the substrate when a mask that defines an exposed area and protected area is disposed on the copper layer, wherein an altered layer is generated in the exposed area comprising a chemically reactive material; and exposing the copper layer to a molecular species that is effective to react with the chemically reactive material so as to remove the altered layer.
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