SILICON DOPING SOURCE FILMS BY ALD DEPOSITION
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United States of America Patent
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Jun 23, 2016
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Jun 26, 2015
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Abstract
A conformal thermal ALD film having a combination of elements containing a dopant, such as boron (or phosphorus), and an oxide (or nitride), in intimate contact with a semiconductor substrate said combination having stable ambient and thermal annealing properties providing a shallow (less than ˜100 A) diffused (or recoil implanted) dopant, such as boron (or phosphorus) profile, into the underlying semiconductor substrate.
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