INSULATING A VIA IN A SEMICONDUCTOR SUBSTRATE

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United States of America Patent

APP PUB NO 20160379818A1
SERIAL NO

14749750

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Abstract

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Insulating a via in a semiconductor substrate, including: applying a first dielectric layer to the semiconductor substrate; and applying a second dielectric layer to the semiconductor substrate, wherein the second dielectric layer is applied on the first dielectric layer, wherein the second dielectric layer is more conformal than the first dielectric layer.

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Patent Owner(s)

Patent OwnerAddress
GLOBALFOUNDRIES INCMAPLES CORPORATE SERVICES LIMITED PO BOX 309 UGLAND HOUSE GRAND CAYMAN KY1-1104

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
COLLINS, CHRISTOPHER WAPPINGERS FALLS, US 40 500
FAROOQ, MUKTA G HOPEWELL JUNCTION, US 212 3727
LIN, YOUBO RIDGEFIELD, US 16 113
OAKLEY, JENNIFER A POUGHKEEPSIE, US 9 21
PETRARCA, KEVIN S NEWBURGH, US 117 2034

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