METHOD FOR IMPROVING SOLAR ENERGY CONVERSION EFFICIENCY OF SEMICONDUCTOR METAL OXIDE PHOTOCATALYSIS USING H2/N2 MIXED GAS PLASMA TREATMENT
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United States of America Patent
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Issued Date -
Dec 29, 2016
app pub date -
Oct 28, 2015
filing date -
Jun 29, 2015
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Abandoned
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Abstract
Disclosed is a method for improving solar energy conversion efficiency of a metal oxide semiconductor photocatalyst, which includes rapidly performing hydrogenation and nitrogenation of a metal oxide semiconductor material through an H2/N2 mixed gas plasma treatment in a single process at room temperature, so as to enhance photocatalytic energy conversion efficiency. Specifically, disclosed is a treatment technique in which a plasma ball formed by controlling a mixing ratio of hydrogen gas to nitrogen gas in a range of 1:1 to 1:3 contacts with a surface of a metal oxide material, such that a great amount of oxygen vacancy and nitrogen elements are introduced in the surface of the metal oxide material to improve electron-hole pairs transfer ability thereof and decrease a size of the band-gap. A catalyst including the metal oxide material directly converts the solar energy into a compound by photocatalytic hydrogen generation and CO2 conversion.
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