SELF-ALIGNED MEMORY CELL CONTACT
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United States of America Patent
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Issued Date -
Dec 22, 2016
app pub date -
Aug 30, 2016
filing date -
Nov 8, 2011
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Abstract
In various embodiments, a memory storage element for storing two or more bits of information is formed by connecting two resistive change elements in series whereby the first resistive change element is made of a first material and the second resistive change element is made of a second material and the melting point of the first resistive change element material is greater than the melting point of the second resistive change element material such that the set and reset states of the two elements can be written and read.
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