UNIQUE BI-LAYER ETCH STOP TO PROTECT CONDUCTIVE STRUCTURES DURING A METAL HARD MASK REMOVAL PROCESS AND METHODS OF USING SAME
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United States of America Patent
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Issued Date -
Dec 22, 2016
app pub date -
Jun 17, 2015
filing date -
Jun 17, 2015
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One method includes, among other things, forming a bi-layer etch stop layer above a conductive contact comprised of titanium nitride, the bi-layer etch stop layer consisting of an upper second layer that is made of aluminum nitride, forming a patterned etch mask comprised of a layer of titanium nitride above a second layer of insulating material, with the bi-layer etch stop layer in position above the conductive contact, performing an etching process through the patterned etch mask to define a cavity in the second layer of insulating material, performing a second etching process to remove at least the layer of titanium nitride of the patterned etch mask, forming an opening in the bi-layer etch stop layer so as to thereby expose a portion of the conductive contact and forming a conductive structure in the cavity that is conductively coupled to the exposed portion of the conductive contact.
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