IR PHOTODETECTOR USING METAMATERIAL-BASED ON AN ANTIREFLECTION COATING TO MATCH THE IMPEDANCE BETWEEN AIR AND SP RESONATOR
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United States of America Patent
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Issued Date -
Dec 15, 2016
app pub date -
Aug 14, 2015
filing date -
Jun 15, 2015
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Abstract
Provided are an infrared photodetector and a method for manufacturing the same. The infrared photodetector includes a bottom contact layer, a light absorption layer stacked on the bottom contact layer, a top contact layer stacked on the light absorption layer, a metal layer stacked on the top contact layer to induce surface plasmon resonance and having a plurality of holes, and a dielectric layer stacked on the metal layer to satisfy an antireflection condition with respect to externally impinging light at a surface plasmon resonance frequency. The dielectric layer is a benzocyclobutene (BCB) layer.
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