Capacitor With 3D NAND Memory

Number of patents in Portfolio can not be more than 2000

United States of America Patent

APP PUB NO 20160365407A1
SERIAL NO

14739717

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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An integrated circuit includes a 3D NAND memory array with a stack of conductive strips and a capacitor with a stack of capacitor terminal strips. Multiple conductive strips in the stack of conductive strips, and multiple capacitor terminal strips of the stack of capacitor terminal strips, share a same plurality of plane positions relative to the substrate. Different plane positions in the same plurality of plane positions characterize different capacitor terminal strips in the stack of capacitor terminal strips and different conductive strips in the stack of conductive strips, and a same plane position characterizing both a conductive strip in the stack of conductive strips and a capacitor terminal strip in the stack of capacitor terminal strips indicates that the conductive strip and the capacitor terminal strip have a same vertical position relative to each other.

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Patent Owner(s)

Patent OwnerAddress
MACRONIX INTERNATIONAL CO LTDNO 16 LI-HSIN RD SCIENCE-BASED INDUSTRIAL PARK HSINCHU

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
LUE, Hang-Ting HSINCHU, TW 272 9263
YEH, Teng-Hao HSINCHU, TW 98 864

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