DUAL-GATE VTFT
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United States of America Patent
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N/A
Issued Date -
Dec 15, 2016
app pub date -
Jun 12, 2015
filing date -
Jun 12, 2015
priority date (Note) -
Abandoned
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Abstract
An electronic device includes an electrically conductive gate structure extending away from a substrate to a top. The top extends beyond an edge to define a reentrant profile. A first conformal dielectric layer is in contact with the gate structure and the substrate. A conformal semiconductor layer is in contact with the conformal dielectric layer. A first electrode is located in contact with a first portion of the semiconductor layer over the top of the gate structure. A second electrode, adjacent to the edge, is located in contact with a second portion of the semiconductor layer, over the substrate and not over the top of the gate structure. A second conformal dielectric layer is on the semiconductor layer in the reentrant profile. A conformal conductive top-gate is on the conformal dielectric layer in the reentrant profile. The first and second electrodes define a semiconductor channel of a dual-gate transistor.
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