APPARATUS FOR DRIVING INSULATED GATE BIPOLAR TRANSISTOR
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United States of America Patent
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Issued Date -
Dec 8, 2016
app pub date -
Jun 2, 2016
filing date -
Jun 4, 2015
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Abstract
Some embodiments may include an apparatus for driving a single power supply of a high power insulated gate bipolar transistor (IGBT). The apparatus may include a gate driver IC to supply a signal for driving the IGBT; an external capacitor connected between a gate and an emitter of the IGBT; a signal inverter to invert an output signal of the gate driver IC; and a switch to supply power to the external capacitor in response to an output signal of the signal inverter.
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