ALLOY CRYSTALLISATION METHOD
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
N/A
Issued Date -
Dec 8, 2016
app pub date -
Feb 12, 2015
filing date -
Feb 12, 2014
priority date (Note) -
Published
status (Latency Note)
Importance
Abstract
A crystallisation method for an alloy film such as a Co-based ternary Heusler-alloy is described having the steps of: providing a substrate; depositing a layer of the alloy film to be crystallised onto the substrate using a physical vapour deposition process to a depth of up to a few hundred nm; optionally depositing a capping layer thereon; heating the deposited film at an annealing temperature below 300° C. and for example of around 200° C. to 300° C. to effect crystallisation of the alloy film layer. The method is in particular applied to the in the deposition and annealing in situ of an alloy film in or on a semiconductor device for example as a functional film in or on such a device and in particular to the deposition and annealing in situ of a highly-spin-polarised ferromagnetic thin film on a semiconductor or spintronic device.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully