GATE-ALL-AROUND VERTICAL GATE MEMORY STRUCTURES AND SEMICONDUCTOR DEVICES, AND METHODS OF FABRICATING GATE-ALL-AROUND VERTICAL GATE MEMORY STRUCTURES AND SEMICONDUCTOR DEVICES THEREOF

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United States of America Patent

APP PUB NO 20160358932A1
SERIAL NO

14730099

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Abstract

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Present example embodiments relate generally to methods of fabricating a three-dimensional gate-all-around vertical gate semiconductor structure comprising forming a plurality of layers over a substrate, the plurality of layers having alternating first insulative material layers and conductive material layers; identifying bit line and word line locations for the formation of bit lines and word lines; removing portions of the plurality of layers outside of the identified bit line and word line locations; forming vertical second insulative material structures in areas outside of the identified bit line and word line locations; removing portions of the plurality of layers in areas along the identified word line locations outside of the identified bit line locations; removing the first insulative material from the first insulative material layers in areas along the identified word line locations; forming bit lines in the identified bit line locations; and forming word lines in the identified word line locations.

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MACRONIX INTERNATIONAL CO LTDNO 16 LI-HSIN ROAD SCIENCE-BASED INDUSTRIAL PARK HSINCHU

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  • 2015 Application Filing Year
  • H01L Class
  • 25498 Applications Filed
  • 22451 Patents Issued To-Date
  • 88.06 % Issued To-Date
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Inventor Name Address # of filed Patents Total Citations
Yang, Ta-Hone Miaoli County, TW 16 48

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  • 2 Citation Count
  • H01L Class
  • 13.47 % this patent is cited more than
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