METHOD AND DEVICE FOR TEXTURING A SILICON SURFACE
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United States of America Patent
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Jun 8, 2016
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Jun 8, 2015
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A method for texturing at least one substrate surface of at least one crystalline silicon substrate includes etching the substrate surface with fluorine gas in a plasma generated in a plasma etching room. A device for texturing at least one substrate surface of at least one crystalline silicon substrate includes a plasma etching room, a gas inlet device coupled with a fluorine source and at least one plasma source. High-quality texturing of silicon surfaces is made possible in a materially and environmentally friendly manner in the method by supplying the plasma etching room with at least gaseous sulfur oxide in addition to the fluorine gas and in the device by additionally coupling the gas inlet device with at least one sulfur oxide source.
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