Reflective mask blank for EUV lithography

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United States of America Patent

PATENT NO 10928721
APP PUB NO 20160357100A1
SERIAL NO

15168572

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Importance

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Abstract

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To provide a reflective mask blank for EUV lithography which is excellent in flatness, whereby the deterioration of the overlay accuracy at the time of pattern transfer can be relatively easily corrected, and the deterioration of the overlay accuracy due to the flatness is small.

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Patent Owner(s)

Patent OwnerAddress
AGC INC5-1 MARUNOUCHI 1-CHOME CHIYODA-KU TOKYO 1008405 ?1008405

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Ikuta, Yoshiaki Chiyoda-ku, JP 49 647

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