FIELD-EFFECT TRANSISTORS WITH BODY DROPDOWNS
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United States of America Patent
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Issued Date -
Dec 1, 2016
app pub date -
May 26, 2015
filing date -
May 26, 2015
priority date (Note) -
Abandoned
status (Latency Note)
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Abstract
A field-effect transistor (FET) includes, a first drain, a second drain, a body and a gate region. The gate region has a length, and is configured and arranged to create, in response to a gate voltage, a channel that is in the body, between the first and second drains, and along the length of the gate region. A plurality of body dropdowns are located in the gate region and are spaced along a width of the gate region. Each of the body dropdowns are configured and arranged to provide an electrical contact to the body for biasing purposes.
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