INTEGRATED CIRCUITS AND METHODS FOR FABRICATING INTEGRATED CIRCUITS HAVING REPLACEMENT METAL GATE ELECTRODES
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United States of America Patent
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N/A
Issued Date -
Dec 1, 2016
app pub date -
May 26, 2015
filing date -
May 26, 2015
priority date (Note) -
Abandoned
status (Latency Note)
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Abstract
Integrated circuits and methods for fabricating integrated circuits are provided. In an exemplary embodiment, a method for fabricating integrated circuits includes defining a pFET region and an nFET region of a semiconductor substrate. The method deposits a first work function material including tungsten and nitride over the pFET region and the nFET region of the semiconductor substrate. The method includes selectively modifying the first work function material in a selected region. Further, the method includes depositing a metal fill over the first work function material in the pFET region and the nFET region of the semiconductor substrate.
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