LOW TEMPERATURE POLYCRYSTALLINE SILICON THIN FILM AND METHOD OF PRODUCING THE SAME, ARRAY SUBSTRATE AND DISPLAY APPARATUS

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United States of America Patent

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15232641

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A method for producing a low temperature polycrystalline silicon thin film, comprising steps of: providing a substrate; forming a thermal conduction and electrical insulation layer, a buffer layer and an amorphous silicon layer on the substrate in this order; and performing a high-temperature treatment and a laser annealing on the amorphous silicon layer to convert the amorphous silicon layer to a polycrystalline silicon thin film, wherein the thermal conduction and electrical insulation layer comprises regular patterns distributed on the substrate.

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BOE TECHNOLOGY GROUP CO LTDNO 10 JIUXIANQIAO RD CHAOYANG DISTRICT BEIJING 100015

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Inventor Name Address # of filed Patents Total Citations
Long, Chunping Beijing, CN 124 484
Tian, Xueyan Beijing, CN 46 82

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