SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD FOR THE SAME
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United States of America Patent
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Issued Date -
Dec 1, 2016
app pub date -
May 27, 2015
filing date -
May 27, 2015
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Abstract
A semiconductor device is provided, which includes a first conductive layer disposed on a substrate, a dielectric layer with at least an opening disposed on the first conductive layer, and a plurality of plugs filling up the openings. At least a portion of the dielectric layer adjacent to the openings is Si-rich, and each of the plugs includes a second conductive layer surrounded by a barrier layer.
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