SEMICONDUCTOR SUBSTRATE FOR FLASH LAMP ANNEAL, ANNEAL SUBSTRATE, SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
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Dec 1, 2016
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Jan 26, 2015
filing date -
Feb 26, 2014
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A semiconductor substrate for flash lamp anneal is used in a manufacturing process of performing ion implantation to form a p-n junction on a semiconductor substrate surface and recovering an ion implantation defect by the flash lamp anneal, carbon concentration of the semiconductor substrate being 0.5 ppma or less. Consequently, it is possible to provide the semiconductor substrate for flash lamp anneal which can easily and surely prevent the ion implantation defect from remaining in a device using a flash lamp anneal process.
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